3 dimensional semiconductor device and method of manufacturing the same

ABSTRACT

A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel to a surface of the semiconductor substrate, and source and drain regions branched from the horizontal channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, processing the first semiconductor layer to locate the common source node corresponding to the source region, forming a gate in a space between the source region and the drain region, forming heating electrodes on the source region and the drain region, and forming resistance variable material layers on the exposed heating electrodes.

CROSS-REFERENCES TO RELATED APPLICATION

This application claims priority under 35 U.S.C. 119(a) to Koreanapplication No. 10-2013-0064578, filed on Jun. 5, 2013, in the KoreanPatent Intellectual Property Office, which is incorporated by herein byreference in its entirety as set forth in full.

BACKGROUND

1. Technical Field

The inventive concept relates to a semiconductor device and a method ofmanufacturing the same, and more particularly, to a resistance variablememory device having a three-dimensional (3D) structure and a method ofmanufacturing the same.

2. Related Art

With the rapid development of mobile and digital informationcommunication and consumer-electronic industry, studies on existingelectronic charge controlled-devices may encounter limitations. Thus,new functional memory devices other than the existing electronic chargedevices need to be developed. In particular, next-generation memorydevices with large capacity, ultra-high speed, and ultra-low power needto be developed.

Currently, resistance variable memory devices using a resistance deviceas a memory medium have been suggested as the next-generation memorydevices. Typical examples of the resistance variable memory devices arephase-change random access memories (PCRAMs), resistance RAMs (ReRAMs),and magentoresistive RAMs (MRAMs).

Each of the resistance variable memory devices may be formed of aswitching device and a resistance device and store data “0” or “1”according to a state of the resistance device.

Even in the variable resistive memory devices, the first priority is toimprove integration density and to integrate memory cells in a limitedand small area as many as possible.

Currently, methods of forming resistance variable memory devices in 3Dstructures are suggested, and demands on methods of stably stacking aplurality of memory cells with a narrow critical dimension are growing.

As a manufacturing method of a typical 3D structure resistance variablememory device, there is a method of manufacturing a switching deviceusing a vertical pillar. However, the method of manufacturing aswitching device using the vertical pillar may have a concern in that afabrication process of the switching device is complex, and an aspectratio is increased due to a height of the vertical pillar.

To overcome this concern of the 3D vertical pillar structure, a 3Dhorizontal channel structure is proposed. The 3D horizontal channelstructure is a structure in which an active region having a horizontalchannel is supported by a common source region unlike an existing buriedtype.

However, a manufacturing process of the 3D horizontal channelsemiconductor device may be accompanied with a process of aligning achannel of the active region with the common source node, and a processof aligning a gate (a word line) with the channel of the active region.Therefore, a process defect such as misalignment may occur in themanufacturing process.

SUMMARY

According to an exemplary embodiment of the present invention, there isprovided a method of manufacturing a semiconductor device. The methodmay include forming a first semiconductor layer including a commonsource node on a semiconductor substrate, forming a transistor region onthe first semiconductor layer, wherein the transistor region includes ahorizontal channel region substantially parallel to a surface of thesemiconductor substrate and source and drain regions branched from thehorizontal channel region to a direction substantially perpendicular tothe surface of the semiconductor substrate, processing the firstsemiconductor layer to locate the common source node corresponding tothe source region, forming a gate in a space between the source regionand the drain region, forming heating electrodes on the source regionand the drain region, and forming resistance variable material layers onthe heating electrodes.

According to another exemplary an embodiment of the present invention,there is provided a method of manufacturing a semiconductor device. Themethod may include sequentially stacking a first semiconductor layer anda second semiconductor layer having different etch selectivity from thatof the first semiconductor layer on a semiconductor substrate, defininga source formation region and a drain formation region by etching aportion of the second semiconductor layer, corresponding to a gateformation region, by a predetermined thickness, forming a gateinsulating layer on a surface of the gate formation region and an oxidesemiconductor layer in the first semiconductor layer, defining atransistor region by etching the second semiconductor layer and theoxide semiconductor layer in an outer side of the drain formationregion, forming a common source node by selectively removing the exposedfirst semiconductor layer, forming a gate in the gate formation region,forming a source region and a drain region in the source formationregion and the drain formation region, respectively, forming heatingelectrodes on the source region and the drain region, and formingresistance variable material layers on the heating electrodes.

According to still another exemplary embodiment of the presentinvention, there is provided a semiconductor device. The semiconductordevice may include a semiconductor substrate, a common source nodeformed on the semiconductor substrate, a transistor region including ahorizontal channel region formed on the common source node andsubstantially parallel to a surface of the semiconductor substrate, andsource and drain regions branched from the horizontal channel region toa direction substantially perpendicular to the surface of thesemiconductor substrate, a gate formed in a space between the sourceregion and the drain region, heating electrodes formed on the sourceregion and the drain region, and resistance variable material layersformed on the heating electrodes. A resistance variable material layeron the drain region is electrically coupled to a heating electrodethereunder, and a resistance variable material layer on the sourceregion is electrically disconnected to a heating electrode thereunder.

For example, the common source node may be formed on a locationcorresponding to the source region. For example, the source and thedrain regions may be arranged to be spaced apart at a certain interval,and the source region is located between a pair of drain regions.Further, a gate insulating layer may be formed between the source regionand the gate, between the drain region and the gate, and the horizontalchannel region and the gate. The gate may be located in a lower end ofthe space between the source region and the drain region, and a gatesealing insulating layer is further formed on the gate. For example, thesemiconductor device further includes a spacer formed on a sidewall of aresistance variable material layer on the drain region, and a spacerinsulating layer located on a sidewall of a resistance variable materiallayer on the source region, and between the resistance variable materiallayer on the source region and a heating electrode below the resistancevariable material layer.

These and other features, aspects, and embodiments are described belowin the section entitled “DETAILED DESCRIPTION”.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thesubject matter of the present disclosure will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings, in which:

FIGS. 1A to 1J are plan views illustrating a method of manufacturing a3D semiconductor device according to an embodiment of the inventiveconcept;

FIGS. 2A to 2J are cross-sectional vie illustrating the method ofmanufacturing the 3D semiconductor device shown in FIGS. 1A to 1J, takenalong lines II-II′ of FIGS. 1A to 1J;

FIG. 3 is a perspective view illustrating the semiconductor devicemanufactured according to an embodiment of the inventive concept;

FIG. 4 is a block diagram illustrating a microprocessor according to anembodiment of the inventive concept;

FIG. 5 is a block diagram illustrating a processor according to anembodiment of the inventive concept; and

FIG. 6 is a block diagram illustrating a system according to anembodiment of the inventive concept.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments will be described in greater detailwith reference to the accompanying drawings.

Exemplary embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofexemplary embodiments (and intermediate structures). As such, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,exemplary embodiments should not be construed as limited to theparticular shapes of regions illustrated herein but may be to includedeviations in shapes that result, for example, from manufacturing. Inthe drawings, lengths and sizes of layers and regions may be exaggeratedfor clarity. Like reference numerals in the drawings denote likeelements. It is also understood that when a layer is referred to asbeing “on” another layer or substrate, it can be directly on the otheror substrate, or intervening layers may also be present. It is alsonoted that in this specification, “connected/coupled” refers to onecomponent not only directly coupling another component but alsoindirectly coupling another component through an intermediate component.In addition, a singular form may include a plural form as long as it isnot specifically mentioned in a sentence.

In the embodiment, a resistance variable memory device amongsemiconductor devices will be described as an example.

Referring to FIGS. 1A and 2A, a first semiconductor layer 110 and asecond semiconductor layer 115 may be sequentially formed on asemiconductor substrate 105. The first semiconductor layer 110 and thesecond semiconductor layer 115 may be formed of materials havingdifferent etch selectivities from each other. The first semiconductorlayer 110 may be used as a common source node, and may include, forexample, a silicon germanium (SiGe) layer. The second semiconductorlayer 115 may be used as an active layer, and may include, for example,a silicon (Si) layer. The second semiconductor layer 115 may be formedthicker than the first semiconductor layer 110. The first and secondsemiconductor layer 110 and 115 may be formed through an epitaxial grownmethod to have a perfect crystalline state. A hard mask layer 120 may beformed on the semiconductor layer 115. The hard mask layer 120 mayinclude, for example, a silicon nitride (Si₃N₄) layer. A first hard maskpattern (not shown) may be formed on the hard mask layer 120 and thesecond semiconductor layer 115 and the first semiconductor layer 110 maybe patterned in a shape of the first mask pattern to define fin typeactive regions A. The active regions A may be arranged at a certaininterval and extend in an x-direction of FIG. 1A. In FIG. IA, PG denotesa gate formation region to be formed in a subsequent process, and PSdenotes a common source mode formation region. The x-direction in FIG. 1may correspond to, for example, a bit line extending direction of theresistance variable memory device, and a y-direction may correspond to,for example, a word line extending direction of the resistance variablememory device.

Referring to FIGS. 1B and 2B, a first interlayer insulating layer 125may be formed on the semiconductor substrate 105 in which the activeregion A is defined. The first interlayer insulating layer 125 mayreduce a step between the fin-type active region A and the semiconductorsubstrate 105. A second mask pattern 130 for defining a source regionand a drain region may be formed on the semiconductor substrateplanarized by the first interlayer insulating layer 125. The second maskpattern 130 may be formed of substantially the same as the hard maskpattern 120, and for example, may be formed in a space between the gateformation regions PG. The second mask pattern 130 may extend to ay-direction of FIG. 1B. Since FIG. 2B illustrates a cross-section of aportion in which the active region is formed, the first interlayerinsulating layer 125 is not shown.

Referring to FIGS. 1C and 2C, a source formation region Sa and a drainformation region Da of a switching transistor are defined by etching thehard mask layer 120 and a portion of the second semiconductor layer 115in a form of the second mask pattern 130. The source formation region Samay be formed in a location corresponding to the common source nodeformation region PS, and the drain formation regions Da may be locatedat both sides of the source formation region Sa. Thus, one sourceformation region Sa may be located between a pair of adjacent drainformation regions Da.

Referring to FIGS. 1D and 2D, a gate insulating layer 135 is formed byoxidizing exposed sidewalls of the source and drain formation regions Saand Da, that is, an exposed surface of the second semiconductor layer115. In the process of forming the gate insulating layer 135, theoutwardly exposed first semiconductor layer 110 may be also partiallyoxidized. The reference numeral 137 denotes an oxidized firstsemiconductor layer (hereinafter, referred to as an oxide semiconductorlayer). When the first semiconductor layer 110 may be SiGe, and thesecond semiconductor layer 115 may be Si, since an oxidation rate ofSiGe is greater than that of Si, a total thickness of the exposed firstsemiconductor layer 110 may be entirely oxidized when the gateinsulating layer 135 is formed.

Referring to FIGS. 1E and 2E, a sacrificial gate layer 140 may be buriedin the gate formation region PG on which the gate insulating layer 135is coated. The sacrificial gate layer 140 may include a layer having adifferent etch selectivity from etching selectivities of the hard masklayer 120 and the second mask pattern 130. For example, the sacrificialgate layer 140 may include a polysillcon layer, but is not limitedthereto. A third mask pattern 145 for defining a transistor region isformed on predetermined portions of the second mask pattern 130 and thesacrificial gate layer 140. The third mask pattern 145 may be formed toshield the common source node formation region PS and the pair ofsacrificial gate layers 140 located at the both sides of the commonsource node formation region PS. That is, since the third mask pattern145 is formed on a resulting structure in which the second mask pattern130 is formed, a precise alignment for defining the transistor regionmay not be necessary. The sacrificial gate layer 140 exposed by thethird mask pattern 145 may be selectively removed. The selective removalof the sacrificial gate layer 140 may use a wet etching process.

Referring to FIGS. 1F and 2F, the exposed gate insulating layer 135, thesecond semiconductor layer 115, and the oxide semiconductor layer 137are etched in forms of the third mask pattern 145 and the second maskpattern 130 to define a unit transistor region TRA.

Referring to FIGS. 1G and 2G, the first semiconductor layer 110 exposedthrough a sidewall of the unit transistor region TRA may be selectivelyremoved. Therefore, the first semiconductor 110 corresponding to thesource formation region Sa remains, and thus the remaining firstsemiconductor layer 110 becomes a common source node CS for electricallycoupling the source formation region Sa and a common source (forexample, may be formed in the semiconductor substrate). At this time,the common source node CS may be defined in a self-aligned manner byselective oxidation and removal of the first semiconductor layer 110,without a separate mask alignment process.

Referring to FIGS. 1H and 2H, a protection layer 150 may be formed on aside surface of the unit transistor region TRA and an exposed surface ofthe semiconductor substrate 105. The protection layer 150 may be formedby performing oxidation on the semiconductor substrate 105. A gap-fillinsulating layer 155 is formed on the semiconductor substrate 105 coatedwith the protection layer 150. The gap-fill insulating layer 155 may beformed to have a sufficient thickness to be filled in a space betweenadjacent unit transistor regions TRA. The gap-fill insulating layer 155may include substantially the same material as the materials of thesecond mask pattern 130 and the hard mask layer 120. For example, thegap-fill insulating layer 155 may include a silicon nitride layer.

The gap-fill insulating layer 155, the second mask pattern 130, and thesacrificial gate layer 140 may be planarized until a surface of the hardmask layer 120 is exposed. Therefore, complete insulation separationbetween the adjacent unit transistor regions TRA may be obtained by thegap-fill insulating layer 155.

The exposed sacrificial gate layer 140 may be selectively removed todefine a gate formation region PG. The sacrificial gate layer 140 may beselectively etched since the sacrificial gate layer 140 has differentetch selectivity from etch selectivities of the gap-fill insulatinglayer 155 and the second mask pattern 130. Subsequently, the gateformation region PG may be cleaned to remove etch damage due to theremoval of the sacrificial gate layer 140. In the cleaning process, thegate insulating layer 135 may be removed, and a new gate insulatinglayer may be formed again. The gate formation region PG may be definedin a self-aligned manner by the previously formed gap-fill insulatinglayer 155 and the second mask pattern 130, without a separate maskalignment process.

Referring to FIGS. 1I and 2I, a gate 160, that is, a word line is formedin a bottom of the cleaned gate formation region PG. The gate 160 mayinclude a conductive material, for example, one or more materialsselected from the group including doped polysilicon, tungsten (W),copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungstennitride (WN), molybdenum nitride (MoN), niobium nitride (NbN), titaniumsilicon nitride (TiSiN), titanium aluminum nitride (TiAlN) titaniumboron nitride (TiBN) zirconium silicon nitride (ZrSiN), tungsten siliconnitride (WS N), tungsten boron nitride (WBN), zirconium aluminum nitride(ZrAlN), molybdenum silicon nitride (MoSiN), molybdenum aluminum nitride(MoAlN), tantalum silicon nitride (TaSiN), tantalum aluminum nitride(TaAlN), titanium (Ti), molybdenum (Mo), tantalum (Ta), titaniumsilicide (TiSi), tantalum silicide (TaSi), titanium tungsten (TiW),titanium oxynitride (TiON) titanium aluminum oxynitride (TiAlON),tungsten oxynitride (WON), and tantalum oxynitride (TaON). The gate 160may be formed by depositing the conductive material to be filled in thegate formation region PG, and leaving the conductive material in thebottom of the gate formation region PG using a recess process such as anetch back process.

Next a gate sealing insulating layer 165 may be formed to be buried inthe gate formation region PG on the gate 160. The gate sealinginsulating layer 165 may include substantially the same material as thatof the gap-fill insulating layer 155, such as a silicon nitride layer.The gate sealing insulating layer 165 may be obtained by depositing thesilicon nitride layer to be filled in the gate formation region PG andthen performing a planarization process on the silicon nitride layer. Inthe planarization process of the gate sealing insulating layer 165, thehard mask layer 120 on the source and drain formation regions Sa and Damay be removed.

Referring to FIGS. 1J and 2J, the exposed source and drain formationregions Sa and Da may be etched by a predetermined depth using thegap-fill insulating layer 155 and the gate sealing insulating layer 165as mask patterns, to define variable resistor regions. Impurities areimplanted into the source and drain formation regions Sa and Da exposedthrough the variable resistor regions, to form a source region S and adrain region D.

Heating electrodes 170 may be formed on the variable resistor regions onthe source and drain regions S and D. The heating electrodes 170 may beformed by forming a conductive layer to be buried in the variableresistor regions, and by recessing the conductive layer to form theheating electrodes 170 in lower portions of the variable resistorregions.

Insulating layers 175 a for spacers may be formed on the source region Sand the drain region D in which the heating electrodes 170 are formed.The insulating layer 175 a for a spacer may include a silicon nitridelayer having a heat-resistance property.

A mask pattern (not shown) may be formed to shield the insulating layer175 a for a spacer on the source region S. The exposed insulating layer175 a for a spacer on the drain region D may be etched using a generalspacer etching process, for example, an anisotropic etching process, toform a spacer 175 b on a sidewall of the variable resistor region on thedrain region D.

The heating electrode 170 on the drain region D may be exposed by thespacer 175 b. However, since the insulating layer 175 a for a spacer onthe source region S is shielded by the mask pattern in the spacerforming process, the insulating layer 175 a for a spacer on the sourceregion S is not subject to the spacer etching process. Therefore, theheating electrode 170 of the source region S is covered by theinsulating layer 175 a for a spacer. Even though the heating electrode170 is formed on the source region S, since the heating electrode 170located on the source region S is shielded by the insulating layer 175 afor a spacer, the heating electrode 170 may not serve as a substantialheating electrode.

Resistance variable material layers 180 may be formed to be filled inthe variable resistor regions. As the resistance variable material′layer 180 may include a PCMO layer for a ReRAM, a chalcogenide layer fora PCRAM, a magnetic layer for a MRAM, a magnetization reversal devicelayer for a spin-transfer torque magnetoresistive RAM (STTMRAM), or apolymer layer for a polymer RAM (PoRAM).

The resistance variable material layer 180 on the drain region D iselectrically coupled to the heating electrode 170, and thus a resistanceof the resistance variable material layer 180 may be changed accordingto provision of current and voltage from the heating electrode 170.Since the resistance variable material layer 180 on the source region Dis electrically isolated from the heating electrode 170 by theinsulating layer 175 a for a spacer, the resistance of the resistancevariable material layer 180 is not changed.

Subsequently, although not shown, a bit line may be formed on theresistance variable material layer 180. The bit line may be formed in adirection substantially perpendicular to an extending direction of thegate 160.

Therefore, the horizontal channel transistor in which the common sourcenode and the gate are formed in a self-aligned manner may be obtained.

Referring to FIG. 3, a transistor region TRA having a horizontal channelis disposed on a semiconductor substrate 105 with a common source nodeCS interposed therebetween.

The transistor region TRA having the horizontal channel includes ahorizontal channel region 200, and a source region S and a drain regionD branched from the horizontal channel region 200 to a z-direction.

The transistor region TRA is formed so that the source region S islocated to correspond to the common-source node CS, and the drainregions D are located at both sides of the source region S. Thus, thetransistor region TRA has a structure that a pair of drain regions Dshare one source region S. The source and drain regions S and D arespaced apart from at a certain interval.

A gate 160 may be located in a space between the source region S anddrain region D, and a protection layer 150 may be disposed between thesource region S and the gate 160 and between the drain region D and thegate 160.

Heating electrodes 170 may be disposed on the source and drain regions Sand D, and resistance variable material layers 180 are located on theheating electrodes 170.

At this time, a spacer 175 b exposing the heating electrode 170 may beformed on a sidewall of the resistance variable material layer 180located on the drain region D, and thus the resistance variable materiallayer 180 may be in direct contact with the heating electrode 170 on thedrain region D.

An insulating layer 175 a for a spacer may be left in a sidewall and abottom of the resistance variable material layer 180 located on thesource region S, and thus the heating electrode 170 on the source regionD and the resistance variable material layer 180 may be electricallydisconnected.

Therefore, the resistance variable material layer is electricallycoupled to the drain region of the transistor to perform a memoryoperation.

In the 3D semiconductor device having the above-described structure, thecommon source node CS suitable for coupling the transistor region TRAhaving the horizontal channel region 200 and the semiconductor substrate105, and the gate 160 may be formed in a self-aligned manner, therebypreventing a process error in a complex alignment process.

Further, an aspect ratio of the semiconductor device may be improvedusing the horizontal channel structure.

An area efficiency may be improved by a configuration in which a pair ofdrain regions share one source region.

As illustrated in FIG. 4, a microprocessor 1000 to which thesemiconductor device according to the embodiment is applied may controland adjust a series of processes, which receive data from variousexternal apparatuses, process the data and transmit processing resultsto the external apparatuses. The microprocessor 1000 may include astorage unit 1010, an operation unit 1020, and a control unit 1030. Themicroprocessor 1000 may be a variety of processing apparatuses, such asa central processing unit (CPU), a graphic processing unit (GPU), adigital signal processor (DSP), or an application processor (AP).

The storage unit 1010 may be a processor register or a register, and thestorage unit may be a unit that may store data in the microprocessor1000 and include a data register, an address register, and a floatingpoint register. The storage unit 1010 may include various registersother than the above-described registers. The storage unit 1010 maytemporarily store data to be operated in the operation unit 1020,resulting data performed in the operation unit 1020, and an address inwhich data to be operated is stored.

The storage unit 1010 may include one of the semiconductor devicesaccording to embodiments. The storage unit 1010 including thesemiconductor device according to the above-described embodiment mayinclude a semiconductor device including a vertical channel structure inwhich a gate and a common source are formed in a self-aligned manner.The detailed configuration of the semiconductor device may be the sameas the structure of FIG. 3.

The operation unit 1020 may perform an operation in the microprocessor1000, and perform a variety of four fundamental rules of an arithmeticoperation or a logic operation depending on a decryption result of acommand in the control unit 1030. The operation unit 1020 may includeone or more arithmetic and logic units (ALU).

The control unit 1030 receives a signal from the storage unit 1010, theoperation unit 1020, or an external apparatus of the microprocessor1000, performs extraction or decryption of a command, or input or outputcontrol, and executes a process in a program form.

The microprocessor 1000 according to the embodiment may further includea cache memory unit 1040 suitable for temporarily storing data inputfrom an external apparatus other than the storage unit 1010 or data tobe output to an external apparatus. At this time, the cache memory unit1040 may exchange data from the storage unit 1010, the operation unit1020, and the control unit 1030 through a bus interface 1050.

As illustrated in FIG. 5, a processor 1100 according to the embodimentmay include various functions to implement performance improvement andmultifunction other than the functions of the microprocessor that maycontrol and adjust a series of processes, which receive data fromvarious external apparatuses, process the data and transmit processingresults to the external apparatuses. The processor 1100 may include acore unit 1110, a cache memory unit 1120, and a bus interface 1130. Thecore unit 1110 in the embodiment is a unit may perform arithmetic andlogic operations on data input from an external apparatus, and include astorage unit 1111, an operation unit 1112, and a control unit 1113. Theprocessor 1100 may be a variety of system on chips (SoCs) such as amulti core processor (MCP), a GPU, and an AP.

The storage unit 1111 may be a processor register or a register, and thestorage unit 1111 may be a unit may store data in the processor 1000 andinclude a data register, an address register, and a floating pointregister. The storage unit 1111 may include various registers other thanthe above-described registers. The storage unit 1111 may temporarilystore data to be operated in the operation unit 1112, resulting dataperformed in the operation unit 1112 and an address in which data to beoperated is stored. The operation unit 1112 may be a unit that mayperform an operation in the inside of the processor 1100, and perform avariety of four fundamental rules of an arithmetic operation or a logicoperation depending on a decryption result of a command in the controlunit 1113. The operation unit 1112 may include one or more arithmeticand logic unit (ALU). The control unit 1113 receives a signal from thestorage unit 1111, the operation unit 1112, and an external apparatus ofthe processor 1100, performs extraction or decryption of a command, orinput or output control, and executes a process in a program form.

The cache memory unit 1120 may be temporarily store data to supplement adata processing rate of a low speed external apparatus unlike the highspeed core unit 1110. The cache memory unit 1120 may include a primarystorage unit 1121, a secondary storage unit 1122, and a tertiary storageunit 1123. In general, the cache memory unit 1120 may include theprimary and secondary storage units 1121 and 1122. When a high capacitystorage unit is necessary, the cache memory unit 1120 may include thetertiary storage unit 1123. If necessary, the cache memory 1120 mayinclude more storage units. That is, the number of storage unitsincluded in the cache memory unit 1120 may be changed according todesign. Here, processing rates of data storage and discrimination of theprimary, secondary, and tertiary storage units 1121, 1122, and 1123 maybe the same or different. When the processing rates of the storage unitsare different, the processing rate of the primary storage unit is thegreatest. One or more of the primary storage unit 1121, the secondarystorage unit 1122, and the tertiary storage unit 1123 in the cachememory unit may include one of the semiconductor devices according toembodiments. The cache memory unit 1120 including the semiconductordevice according to the above-described embodiment may include asemiconductor device including a vertical channel structure in which agate and a common source are formed in a self-aligned manner. Thedetailed configuration of the semiconductor device may be the same asthe structure of FIG. 3.

FIG. 5 has illustrated that all the primary, secondary, tertiary storageunits 1121, 1122, and 1123 are formed in the cache memory unit 1120.However, all the primary, secondary, tertiary storage units 1121, 1122,and 1123 may be formed in the outside of the cache memory unit 1120, andmay supplement a difference between the processing rate of the core unit1110 and an external apparatus. Further, the primary storage unit 1121of the cache memory unit 1120 may be located in the core unit 1110, andthe secondary storage unit 1122 and the tertiary storage unit 1123 maybe formed in the outside of the core unit 1110 to enforce a function tocompensate a processing rate.

The bus interface 1130 is a unit that may couple the core unit 1110 andthe cache memory unit 1120 to efficiently transmit data.

The processor unit 1100 according to the embodiment may include aplurality of core units 1110, and the core units 1110 may share a cachememory unit 1120. The core units 1110 and the cache memory unit 1120 maybe coupled through the bus interface 1130. The core units 1110 may havethe same configuration as the configuration of the above-described coreunit 1110. When the core units 1110 are provided, the primary storageunit 1121 of the cache memory unit 1120 may be formed in each of thecore units 1110 corresponding to the number of core units 1110, and thesecondary storage unit 1122 and the tertiary storage unit 1123 may beformed in one body in the outsides of the core units 1110 to be sharedthrough the bus interface 1130 Here, the processing rate of the primarystorage unit 1121 may be larger than those of the secondary and tertiarystorage units 1122 and 1123.

The processor 1100 according to the embodiment may further include anembedded memory unit 1140 that may store data, a communication moduleunit 1150 that may transmit and receive data from an external apparatusin a wired manner or a wireless manner, a memory control unit 1160 thatmay drive an external storage device, a media processing unit 1170 thatmay process data processed in the processor 1100 or data input from anexternal apparatus and outputting a processing result to an externalinterface device, and a plurality of modules. At this time, the modulesmay transmit data to and receive data from the core unit 1110 and thecache memory unit 1120, and transmit and receive data between themodules, through the bus interface 1130.

The embedded memory unit 1140 may include a volatile memory or anonvolatile memory. The volatile memory may include a dynamic randomaccess memory (DRAM), a mobile DRAM, a static random access memory(SRAM) and the like, and the nonvolatile memory may include a read onlymemory (ROM) a NOR flash memory, a NAND flash memory, a phase-changerandom access memory (PRAM), a resistive RAM (RRAM) a spin transfertorque RAM (STTRAM), a magnetic RAM (MRAM), and the like. Thesemiconductor device according to the embodiment may be applied to theembedded memory unit 1140.

The communication module unit 1150 may include all modules such as amodule coupled to a wired network and a module coupled to a wirelessnetwork. The wired network module may include a local area network(LAN), a universal serial bus (USB), Ethernet, a power linecommunication (PLC), and the like, and the wireless network module mayinclude Infrared Data Association (IrDA), Code Division Multiple Access(CDMA), Time Division Multiple Access (TDMA), Frequency DivisionMultiple Access (FDMA), a wireless LAN, Zigbee, a Ubiquitous SensorNetwork (USN), Bluetooth, Radio Frequency Identification (RFID), LongTerm Evolution (LTE), Near Field Communication (NFC), Wireless BroadbandInternet (Wibro), High Speed Downlink Packet Access (HSDPA), WidebandCDMA (WCDMA), Ultra WideBand (UWB), and the like.

The memory control unit 1160 may be a unit that may manage datatransmitted between the processor 1100 and an external apparatus thatmay operate according to a different communication standard from theprocessor 1100. The memory control unit 1160 may include a variety ofmemory controllers, or a controller that may control Integrated DeviceElectronics (IDE), Serial Advanced Technology Attachment (SATA), a SmallComputer System Interface (SCSI), a Redundant Array of Independent Disks(RAID), a solid state disk (SSD), External SATA (eSATA), PersonalComputer Memory Card International Association (PCMCIA), a USB, a securedigital (SD) card, a mini secure digital (mSD) card, a micro SD card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia card (SM), a multi media card (MMC), an embedded MMC eMMC), acompact flash (CF) card, or the like.

The media processing unit 1170 may be a unit that may process dataprocessed in the processor 1100 or data input from an external inputdevice and outputting a processing result to an external interfacedevice so that the processing result may be transferred in video, avoice, and other types. The media processing unit 1170 may include aGPU, a DSP, a HD audio, a high definition multimedia interface (HDMI)controller, or the like.

As illustrated in FIG. 6, a system 1200 to which the semiconductordevice according to an embodiment of the inventive concept is applied isa data processing apparatus. The system 1200 may perform input,processing, output, communication, storage, and the like to perform aseries of operations on data, and include a processor 1210, a mainstorage device 1220, an auxiliary storage device 1230, and an interfacedevice 1240. The system according to the embodiment may be a variety ofelectronic systems that may operate by using a processor, such as acomputer, a server, a personal digital assistant (PDA), a portablecomputer, a web tablet, a wireless phone, a mobile phone, a smart phone,a digital music player, a portable multimedia player (PMP), a camera, aglobal positioning system (GPS), a video camera, a voice recorder,Telematics, an audio visual (AV) system, or a smart television.

The processor 1210 is a core configuration of the system that maycontrol interpretation of an input command and processing an operation,comparison, and the like of data stored in the system, and may be formedof a MPU, a CPU, a single/multi core processor, a GPU, an AP, a DSP, orthe like.

The main storage unit 1220 is a storage place that may receive a programor data from the auxiliary storage device 1230 and execute the programor the data. The main storage device 1220 retains the stored contenteven in power off, and may include the semiconductor device according tothe above-described embodiment. The main storage device 1220 may use asemiconductor device including a vertical channel structure in which agate and a common source are formed in a self-aligned manner. Thedetailed configuration of the semiconductor device may be the same asthe structure of FIG. 3.

The main storage device 1220 according to the embodiment may furtherinclude an SRAM or a DRAM of a volatile memory type in which allcontents are erased in power off. Alternatively, the main storage device1220 may not include the semiconductor device according to theembodiment but may include an SRAM or a DRAM of a volatile memory typein which all contents are erased in power off.

The auxiliary storage device 1230 is a storage device that may store aprogram code or a data. The auxiliary storage device 1230 may have alower data processing rate than that of the main storage device 1220,but may store a large amount of data and include the semiconductordevice according to the above-described embodiment. The auxiliarystorage unit 1230 may also use a semiconductor device including avertical channel structure in which a gate and a common source areformed in a self-aligned manner. The detailed configuration of thesemiconductor device may be the same as the structure of FIG. 3.

An area of the auxiliary storage device 1230 according to the embodimentmay be decreased, to reduce a size of the system 1200 and increaseportability of the system 1200. Further, the auxiliary storage device1230 may further include a data storage system, such as a magnetic tapeand a magnetic disc using a magnetism, a laser disc using light, amagneto-optical disc using a magnetism and light, an SSD, a USB memory,a SD card, a mSD card, a micro SD card, a SDHC card, a memory stickcard, a smart media card, a MMC card, an eMMC, or a CF card. Unlikethis, the auxiliary storage device 1230 may not include thesemiconductor device according to the above-described embodiment but mayinclude a data storage system, such as a magnetic tape and a magneticdisc using a magnetism, a laser disc using light, a magneto-optical discusing a magnetism and light, an SSD, a USB memory, a SD card, a mSDcard, a micro SD card, a SDHC card, a memory stick card, a smart mediacard, a MMC card, an eMMC, or a CF card.

The interface device 1240 may exchange a command and data of an externalapparatus with the system of the embodiment, and may be a keypad, akeyboard, a mouse, a speaker, a mike, a display, a variety of HumanInterface Devices (HIDs), or a communication device. The communicationdevice may include all modules such as a module coupled to a wirednetwork or a module coupled to a wireless network. The wired networkmodule may include a LAN, a USB, Ethernet, a power line communication(PLC), or the like, and the wireless network module may include InfraredData Association (IrDA), Code Division Multiple Access (CDMA), TimeDivision Multiple Access (TDMA), Frequency Division Multiple Access(FDMA), a wireless LAN, Zigbee, a Ubiquitous Sensor Network (USN),Bluetooth, Radio Frequency Identification (RFID), Long Term Evolution(LTE), Near Field Communication (NFC), Wireless Broadband Internet(Wibro), High Speed Downlink Packet Access (HSDPA), Wideband CDMA(WCDMA), Ultra WideBand (UWB), or the like.

As specifically described above, the memory device according to theembodiment may form a gate and a common source in a self-aligned mannerto reduce a complex alignment process and prevent a process defect.

The above embodiment of the present invention is illustrative and notlimitative. Various alternatives and equivalents are possible. Theinvention is not limited by the embodiment described herein. Nor is theinvention limited to any specific type of semiconductor device. Otheradditions, subtractions, or modifications are obvious in view of thepresent disclosure and are intended to fall within the scope of theappended claims.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: forming a first semiconductor layer including acommon source node on a semiconductor substrate; forming a transistorregion on the first semiconductor layer, wherein the transistor regionincludes a horizontal channel region substantially parallel to a surfaceof the semiconductor substrate, and source and drain regions branchedfrom the horizontal channel region to a direction substantiallyperpendicular to the surface of the semiconductor substrate; processingthe first semiconductor layer to locate the common source nodecorresponding to the source region; forming a gate in a space betweenthe source region and the drain region; forming heating electrodes onthe source region and the drain region; and forming resistance variablematerial layers on the heating electrodes.
 2. The method of claim 1,wherein the forming of the transistor region includes: forming a secondsemiconductor layer, which has different etch selectivity from the firstsemiconductor layer, on the first semiconductor layer; and defining thesource and drain regions, and the horizontal channel region coupling thesource and drain regions by etching a predetermined portion of thesecond semiconductor layer.
 3. The method of claim 2, wherein thedefining of the source and drain regions and the horizontal channelregion includes: forming a hard mask layer on the second semiconductorlayer; defining a source formation region and a drain formation regionby etching the hard mask layer and a portion of the second semiconductorlayer; burying a sacrificial gate layer in a space between the sourceformation region and the drain formation region; forming a mask patternfor transistor definition to include the source formation region andsacrificial gate layers located at both sides of the source formationregion; patterning the second semiconductor layer and the firstsemiconductor layer using the mask pattern for transistor definition andthe hard mask layer; and removing the mask pattern for transistordefinition and the sacrificial gate layer.
 4. The method of claim 3,wherein the locating of the common source node includes: forming a gateinsulating layer and an oxide semiconductor layer by oxidizing anexposed surface of the second semiconductor layer and an exposed firstsemiconductor layer between the defining of the source formation regionand the drain formation region and the forming of the sacrificial gatelayer; and removing the exposed first semiconductor layer so that thecommon source node surrounded by the oxide semiconductor layer remainsafter the removing of the mask pattern for transistor definition.
 5. Themethod of claim 4, wherein the forming of the gate in the space betweenthe source region and the drain region includes: forming a protectionlayer on an exposed surface of the transistor region; forming a gap-fillinsulating layer in a space between transistor regions; filling aconductive material in the space between the source formation region andthe drain formation region; recessing the filled conductive material bya certain thickness; and filling a gate sealing insulating layer in thespace between the source formation region and the drain formation regionon the recessed conductive material.
 6. The method of claim 5, whereinthe forming of the heating electrodes includes: defining a variableresistor formation region by recessing the source formation region andthe drain formation region by a predetermined thickness; depositing aconductive material to be filled in the variable resistor formationregion; and recessing the conductive material.
 7. The method of claim 6,further comprising defining the source and drain region by implantingimpurities into the exposed source formation region and drain formationregion between the forming of the variable resistor formation region andthe depositing of the conductive material.
 8. The method of claim 7,wherein the shielding of the heating electrode on the source region andthe opening of the heating electrode on the drain region includes:depositing a spacer insulating layer in the variable resistor regions inwhich the heating electrodes are formed; and forming a spacer exposingthe heating electrode on the drain region by etching the spacerinsulating layer in a state in which the spacer insulating layer on thesource region is shield.